কোম্পানির ব্লগ সম্পর্কে Supply Microchip Low-Side,High-Side,Three-Phase,Half-Bridge,High-Voltage MOSFET/IGBT Gate Driver

Supply Microchip Low-Side,High-Side,Three-Phase,Half-Bridge,High-Voltage MOSFET/IGBT Gate Driver

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Microchip’s gate driver product range covers discrete low-side, standalone high-side, half-bridge and three-phase integrated high-voltage drivers, compatible with N-channel MOSFETs and IGBTs. Centred on 600V high-voltage processes and bootstrap level-shifting solutions, the range also includes low-voltage synchronous drivers, isolated drivers and mSiC digital driver variants. These are designed for applications such as industrial inverters, BLDC/PMSM motors, photovoltaic energy storage, power conversion, and compressor/pump drives, catering to both low-power, low-cost solutions and high-power, high-reliability power module driver requirements. The entire device family is topologically differentiated based on five core capabilities: level conversion, gate charge/discharge capability, anti-through dead zone, negative transient tolerance, UVLO (undervoltage lockout) and dV/dt immunity, serving as the standard interface between the MCU and power devices in the power conversion chain.

I. Low-side gate drivers: the simplest power switch drive units

In low-side drive configurations, the source of the power switch is directly referenced to power ground; no bootstrap circuit or high-voltage level shifting is required. This offers the simplest structure and is suitable for independent control of the lower switch, synchronous buck lower switches, relay driving, auxiliary switches and discharge circuits.

Representative models include single- and dual-channel low-side drivers such as the TC4420 and MCP14E3/E4/E5. These offer peak sink and source currents of up to 6A, are compatible with 3.3V/5V logic levels, and can rapidly charge and discharge MOSFET gate capacitance, thereby reducing switching delay and switching loss (RS).

Key features: Output potential is referenced to GND, simplifying power supply requirements; fast switching speed and comprehensive ESD protection; some models feature a dedicated enable pin, facilitating fault shutdown.

Limitations: Cannot drive floating-ground high-side N-channel transistors; suitable only for power devices with a source connected to ground; when used with IGBTs, attention must be paid to the amplitude of the gate drive voltage. IGBTs generally require +15V for turn-on and –5V for turn-off; standard single-supply low-side drivers must be paired with a negative voltage network to meet IGBT turn-off requirements.

Typical applications: lower-side IGBTs in DC-DC converters, solid-state switches, single-phase auxiliary circuits, low-power resistance welding, and solenoid valve drivers.

II. High-side gate drivers: Driving floating-ground N-channel transistors—booster circuits and level-shifting are key

High-side drivers are used for N-channel MOSFETs/IGBTs where the source potential floats relative to the bus voltage, which can reach several hundred volts. The chip incorporates an integrated high-voltage level-shifting unit, which, together with a bootstrap diode and bootstrap capacitor, forms a bootstrap power supply loop; this also constitutes the fundamental architecture of Microchip’s 600V series of high-voltage drivers.

Standalone single-channel high-side drivers are suitable for topologies requiring only a single floating-ground N-channel device, such as single-ended active clamping or buck-boost N-channel devices; however, in engineering practice, the vast majority of high-side drivers are not used in isolation, but are instead integrated in pairs with low-side drivers within half-bridge drivers.

Technical highlights: The level-shifting circuit must withstand extremely high dV/dt common-mode noise to prevent logic inversion; the capacitance of the bootstrap capacitor must be matched to the switching frequency and the upper limit of the duty cycle, as an excessively high duty cycle will cause the voltage across the bootstrap capacitor to drop; the drive pins must support negative voltage transients to suppress the negative voltage spikes caused by the Miller effect during IGBT turn-off, thereby preventing unintended gate turn-on.

Note: P-channel high-side MOSFET solutions are rarely used in high-voltage, high-power applications; Microchip’s high-voltage gate driver family is entirely designed for N-channel power devices, better aligning with mainstream MOSFET and IGBT selection practices.

III. Half-Bridge Gate Drivers: Single-chip integration of high-side and low-side channels, the fundamental building block for synchronous conversion

Half-bridge drivers are the core product category that bridges the gap across the entire family. A single IC incorporates one high-side and one low-side drive channel, driving a pair of upper and lower N-channel transistors to form a half-bridge arm. Representative models include the MCP14H2103, MCP14H2304, MCP14LH2181, MIC4605, covering specifications ranging from 85V low-voltage synchronous applications to 600V high-voltage industrial applications.

The MCP14H series of 600V half-bridge high-voltage drivers utilise a bootstrap operating mode, with a maximum high-side floating voltage of 600V. Some models feature a built-in fixed dead-time of typically 400 ns, along with hardware anti-short-circuit protection to prevent both the upper and lower N-channel transistors from conducting simultaneously, which could cause them to fail; Additionally, low-voltage half-bridge drivers such as the MIC4605 support adaptive dead-time, which monitors switch node levels in real time to dynamically compress the dead-time, thereby improving the efficiency of synchronous buck and bidirectional converters, whilst also integrating hardware short-circuit protection to mitigate risks arising from noise and erroneous PWM inputs.

Key parameter differences: Peak sink and source current ranges from several hundred mA to 4.5 A; low-current versions are suitable for low-power IGBTs and small-package MOSFETs, whilst high-current versions are designed for power devices with large gate capacitance and high-frequency Si MOSFETs.

Advantages: Streamlined BOM; a single chip handles the drive for a single-phase bridge arm; features built-in UVLO, which locks the output when the drive supply is insufficient, preventing power devices from overheating and failing whilst operating in the linear region; 3.3V logic-compatible input, allowing direct connection to the MCU’s PWM port.

Suitable topologies: synchronous buck, half-bridge DC-AC inverters, LLC resonant converters, single-phase inverters, and stepper motor winding drives.

IV. Three-phase gate drivers: Three half-bridges integrated into a single chip – the preferred choice for motor inverters

A three-phase gate driver essentially consists of three sets of half-bridge drivers integrated onto a single chip, providing six drive outputs (three-phase HO/LO) to drive six MOSFETs or IGBTs to form a three-phase full-bridge inverter. A typical example is the MCP8062136, a 600V high-voltage three-phase driver. It is also based on a bootstrap level-shifting architecture and is specifically designed for BLDC and PMSM permanent magnet synchronous motors.

Architectural features: The chip incorporates three independent high-side level-shifters and three low-side drivers; each channel can be regarded as an independent half-bridge. Some models support phase-by-phase fault feedback and overcurrent/short-circuit fault flag outputs, facilitating FOC algorithm protection by the main controller. Certain versions feature built-in dead-time control, fault latching and global enable shutdown, making them suitable for low-power drives in applications such as fans, water pumps, compressors and servo systems.

Product Selection:

- Low-cost three-phase gate drivers: Focus on basic drive capabilities with simple protection functions; suitable for consumer electronics and white goods motors;

- Enhanced three-phase solutions: Integrate comparators and support IGBT desaturation short-circuit detection; work with external circuits to implement IGBT short-circuit protection; designed for industrial variable-frequency drives.

Limitations: The bootstrap circuit of a three-phase integrated driver requires three independent bootstrap capacitors and diodes; PCB layout must prioritise the handling of switching nodes to reduce common-mode coupling noise. In applications involving high-voltage, high-current IGBT modules, the drive capability of a single-chip three-phase driver is insufficient, necessitating the use of an isolated driver board or Microchip’s mSiC modular driver solution.

V. Common Technical Stack for High-Voltage Gate Drivers and Differences in MOSFET/IGBT Adaptation

Microchip’s range of 600V high-voltage gate drivers (MCP14H/MCP14LH/MCP8062 series) forms the core of the product family, all utilising a high-voltage BCD process with level shifting and bootstrap power supply. The differences in usage between MOSFETs and IGBTs are outlined below:

1. Drive voltage: Power MOSFETs can generally be driven by a single power supply of 10–15 V; for IGBTs, a +15 V turn-on and –5 V turn-off voltage is recommended to suppress parasitic turn-on caused by the Miller platform. Standard bootstrap half-bridge drivers default to a single-supply output; to achieve negative-voltage turn-off, an external negative-voltage rail or negative-voltage clamping circuit must be added.

2. Drive current: MOSFETs are optimised for high-frequency operation and the charging and discharging of gate capacitance; IGBTs have relatively slower switching speeds, with the risk of short-circuiting being a key concern. For high-power IGBTs, it is preferable to use an isolated drive solution with DESAT (de-saturation) detection rather than a simple 600 V non-isolated gate driver.

3. dV/dt tolerance: IGBTs exhibit a higher rate of voltage change during turn-off; the common-mode noise suppression capability of high-side channels is crucial. When selecting a driver, prioritise models that specify negative transient tolerance to prevent false triggering.

4. Protection Capabilities: General-purpose 600V silicon gate drivers come standard with UVLO and hardware dead-time anti-short-circuit protection; however, they do not natively include short-circuit detection. High-power IGBT solutions require external DESAT detection or an upgrade to Microchip’s isolated mSiC digital gate drivers. The mSiC series supports Augmented Switching™ adjustable gate waveforms to suppress ringing and EMI, is compatible with SiC MOSFETs and high-power IGBT modules, supports fibre-optic isolation interfaces, and is designed for power modules rated at 1200V and above.